Pressure tuned magnetism paves the way for novel electronic devices

(Bar-Ilan University) Using very sensitive magnetic probes, an international team of researchers has found surprising evidence that magnetism which emerges at the interfaces between non-magnetic oxide thin layers can be easily tuned by exerting tiny mechanical forces. This discovery provides a new and unexpected handle to control magnetism, thus enabling denser magnetic memory, and opens new and unexpected routes for developing novel oxide-based spintronic devices.